Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor.

Autor:	Pei-Kang Chung, Shun-Tung Yena
Předmět:	HEAT radiation & absorption PHONONS TERAHERTZ materials FIELD-effect transistors ELECTRON mobility
Zdroj:	Journal of Applied Physics; 2014, Vol. 116 Issue 18, p183101-1-183101-4, 4p, 4 Graphs
Abstrakt:	We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 μW and a power conversion efficiency higher than a resistor by more than 20%. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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