| Autor: |
Tran, Binh, Lin, Kung-Liang, Sahoo, Kartika, Chung, Chen-Chen, Nguyen, Chi-Lang, Chang, Edward |
| Zdroj: |
Electronic Materials Letters; Nov2014, Vol. 10 Issue 6, p1063-1067, 5p |
| Abstrakt: |
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9- μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010°C and a growth pressure of 50 Torr. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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