Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors.
| Autor: | Jaechun Cha, Seungwoo Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, Se-Aug Jang, Seoungjin Yeom, Sungki Park, Cjay Cho, Sunny Hwang, Jongwon Park, Sungho Jo |
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| Zdroj: | 2014 20th International Conference on Ion Implantation Technology (IIT); 2014, p1-3, 3p |
| Databáze: | Complementary Index |
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