Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles.
| Autor: | Mederos, M., Mestanza, S. N. M., Doi, I., Diniz, J. A. |
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| Zdroj: | 2014 29th Symposium on Microelectronics Technology & Devices (SBMicro); 2014, p1-5, 5p |
| Databáze: | Complementary Index |
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