The annealing temperature effect on the structure and electrical properties of titanium dioxide (TiO2) film deposited by reactive RF sputtering.

Autor:	Norhafiezah, S., Ayub, R. M., Arshad, M. K. Md, Azman, A.H., Fatin, M. F., Farehanim, M.A., Hashim, U.
Zdroj:	2014 IEEE International Conference on Semiconductor Electronics (ICSE2014); 2014, p174-177, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu