The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs.
| Autor: | Adamu-Lema, F., Amoroso, S. M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G., Asenov, A. |
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| Zdroj: | 2014 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2014, p285-288, 4p |
| Databáze: | Complementary Index |
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