| Autor: |
Das, Debarati, De, Swapnadip, Chanda, Manash, Kumar Sarkar, Chandan |
| Předmět: |
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| Zdroj: |
IUP Journal of Electrical & Electronics Engineering; Oct2014, Vol. 7 Issue 4, p19-42, 24p |
| Abstrakt: |
The short channel effects can be reduced using two techniques–the gate engineering technique and the channel engineering technique. The gate material engineering technique allows the Double Material Gate (DMG) devices to have same threshold voltage for a reduced doping concentration in the channel region, which gives better immunity to mobility degradation. In DMG MOSFET, two different materials of different work functions are combined to form a single gate of a bulk MOSFET, and in the channel engineering technique, a single halo or double haloes are used, which shows a considerable reduction of Strongly Correlated Electron Systems (SCEs) and hot electron effects. It is seen that a single gate double material double halo MOSFET provides excellent short channel suppression as compared to single halo or double halo MOSFET for channel lengths around 40 nm. In this paper, a surface potential model for Double Gate Double Metal Double Halo (DGDMDH) MOSFET in the subthreshold regime is proposed. The basic idea is to model the subthreshold surface potential applying Gauss's law to a rectangular box covering the depletion layer depth. This structure provides excellent immunity to short channel effects as compared to conventional devices and hence can be used in low power VLSI circuits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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