| Autor: |
Nirschl, Anna, Gomez‐Iglesias, Alvaro, Sabathil, Matthias, Hartung, Georg, Off, Jürgen, Bougeard, Dominique |
| Předmět: |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; Nov2014, Vol. 211 Issue 11, p2509-2513, 5p |
| Abstrakt: |
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for quantitative predictions of IQEs including optimizations regarding spatial carrier distributions at room temperature. At elevated temperatures, a moderate increase of the Auger coefficient gives a more precise agreement between experiment and simulations. The results show that the model is suitable to quantitatively predict the IQE for different structures and temperatures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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