Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes.

Autor:	Makarenko, L. F., Lastovskii, S. B., Yakushevich, H. S., Moll, M., Pintilie, I.
Předmět:	METAL complexes DIODES BORON OXYGEN SILICON solar cells RADIATION
Zdroj:	Physica Status Solidi. A: Applications & Materials Science; Nov2014, Vol. 211 Issue 11, p2558-2562, 5p
Abstrakt:	Using forward current injection with densities in the range 15-30 A/cm2 we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasing with increasing irradiation dose. Additionally, some evidences have been obtained on the negative- U properties of the radiation-induced boron-oxygen complex. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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