Optical spectra and analysis of Er3+ in silicon with C, O, and N impurities.

Autor: Wortman, D.E., Morrison, C.A., Bradshaw, J. L.
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1997, Vol. 82 Issue 5, p2580, 4p, 5 Charts, 2 Graphs
Abstrakt: Analyzes the optical spectra of erbium in silicon with carbon, oxygen and nitrogen impurities. Determination of the natura of the electrostatic field at the site of the erbium ion; Variation in crystal-field parameters.
Databáze: Complementary Index