| Autor: |
Gang Ye, Hong Wang, Serene Lay Geok Ng, Rong Ji, Arulkumaran, Subramaniam, Geok Ing Ng, Yang Li, Zhi Hong Liu, Kian Siong Ang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/13/2014, Vol. 105 Issue 15, p1-3, 3p, 1 Black and White Photograph, 1 Diagram, 2 Graphs |
| Abstrakt: |
Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300°C to 700°C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500°C, which could be attributed to the thinning of GaOx layer associated with low surface defect states due to "clean up" effect of ALD-ZrO2 on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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