| Autor: |
Walters, R.J., Messenger, S.R., Cotal, H. L., Xapsos, M. A., Wojtczuk, S. J., Serreze, H. B., Summers, G. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1997, Vol. 82 Issue 5, p2164, 12p, 1 Diagram, 12 Charts, 12 Graphs |
| Abstrakt: |
Studies the effect of 1 MeV electron and 3 MeV proton irradiation on the performance of n+p indium phosphide (InP) solar cells grown heteroepitaxially on Si (InP/Si) substrates. Measurements of current versus voltage, capacitance versus voltage and quantum efficiency; Cell degradation under proton irradiation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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