| Autor: |
Xiaofan Jiang, Zhongyuan Ma, Huafeng Yang, Jie Yu, Wen Wang, Wenping Zhang, Wei Li, Jun Xu, Ling Xu, Kunji Chen, Xinfan Huang, Duan Feng |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 12, p1-5, 5p, 3 Color Photographs, 1 Black and White Photograph, 6 Graphs |
| Abstrakt: |
Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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