3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature.
| Autor: | Ejeckam, Felix, Babic, Dubravko, Faili, Firooz, Francis, Daniel, Lowe, Frank, Diduck, Quentin, Khandavalli, Chandra, Twitchen, Daniel, Bolliger, Bruce |
|---|---|
| Zdroj: | 2014 Semiconductor Thermal Measurement & Management Symposium (SEMI-THERM); 2014, p242-246, 5p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|