New reverse-conducting IGBT (1200V) with revolutionary compact package.
| Autor: | Takahashi, K., Yoshida, S., Noguchi, S., Kuribayashi, H., Nashida, N., Kobayashi, Y., Kobayashi, H., Mochizuki, K., Ikeda, Y., Ikawa, O. |
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| Zdroj: | 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2014, p131-134, 4p |
| Databáze: | Complementary Index |
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