Simple and accurate capacitance modeling of 32nm multi-fin FinFET.
Autor: | Kim, Donghu, Kang, Yesung, Ryu, Myunghwan, Kim, Youngmin |
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Zdroj: | 2013 International SoC Design Conference (ISOCC); 2013, p392-393, 2p |
Databáze: | Complementary Index |
Externí odkaz: |