| Autor: |
David, M., Babu, S. V., Chaudhry, I., Flint, B. K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/10/1990, Vol. 57 Issue 11, p1093, 3p |
| Abstrakt: |
The vacuum ultraviolet (VUV) (120–200 nm) and extreme ultraviolet (EUV) (80–120 nm) reflectance characteristics of as-deposited films of amorphous aluminum nitride (AlN) and diamond-like carbon (DLC), and of single-crystal β-silicon carbide (SiC) have been measured. AlN and DLC films have been grown by plasma-enhanced chemical vapor deposition (PECVD) and the SiC film by chemical vapor deposition (CVD). The VUV reflectivities of AlN and SiC exceed 50% while the reflectance of DLC film is low (∼10%). Furthermore, DLC and SiC films display EUV reflectance characteristics that are very desirable. The reflectivity of as-deposited SiC is 40% and that of DLC is about 20%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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