| Autor: |
Tang, T., Swanson, P., Herzinger, C., Miller, L. M., Cockerill, T. M., Bryan, R. P., DeTemple, T. A., Coleman, J. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/20/1990, Vol. 57 Issue 8, p741, 3p |
| Abstrakt: |
The routing ability of waveguide S-bend structures patterned by SiO2 impurity induced layer disordering of a single GaAs quantum well graded barrier laser structure is investigated. For a raised-cosine bend with 100 μm offset guides, the measured transition length for 3 dB loss was less than 300 μm for near single mode guides of 1 μm width. In addition, vacancy-induced disordering of the native quantum well region is investigated and is shown to increase the band gap to a point where the material is low loss for radiation generated by the laser. The 3 dB length for these blue shifted cores actually decreased to about 230 μm, a fact attributed to reduced mode conversion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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