| Autor: |
Hueschen, Mark R., Moll, Nick, Fischer-Colbrie, Alice |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/23/1990, Vol. 57 Issue 4, p386, 3p |
| Abstrakt: |
Experimental results on an improved type of transistor based on real space electron transfer are presented. Microwave measurements through 25 GHz show an extrapolated fT of 60 GHz and a measured fMAX of 18 GHz. These gain-bandwidth products are approximately twice as high as any previously reported for this relatively new class of device. This improvement in performance results from a novel device design which incorporates a doped, pseudomorphic InGaAs channel, a GaAs collector drift region, and a collector-up structure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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