| Autor: |
Mahan, John E., Geib, Kent M., Robinson, G. Y., Long, Robert G., Xinghua, Yan, Bai, Gang, Nicolet, Marc-A., Nathan, Menachem |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/21/1990, Vol. 56 Issue 21, p2126, 3p |
| Abstrakt: |
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si<110>. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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