| Autor: |
Rao, M. R., Tarsa, E. J., Samoska, L. A., English, J. H., Gossard, A. C., Kroemer, H., Petroff, P. M., Hu, E. L. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/7/1990, Vol. 56 Issue 19, p1905, 3p |
| Abstrakt: |
Superconducting YBaCuO (1-2-3) thin films have been deposited on GaAs by laser ablation, in the presence of an oxygen plasma, at a substrate temperature of 600 °C. The (100) GaAs had a thin (100 Å) Al0.3Ga0.7As cap layer, in order to prevent decomposition of the GaAs. The as-deposited YBaCuO film had a Tc (onset) of 80 K and a Tc (zero) of 20 K. Transmission electron microscopy studies showed the presence of voids in the GaAs, ∼1000 Å in length, and extending 500 Å into the GaAs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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