| Autor: |
Oehrlein, G. S., Bestwick, T. D., Jones, P. L., Corbett, J. W. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/9/1990, Vol. 56 Issue 15, p1436, 3p |
| Abstrakt: |
We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ([bar_over_tilde:_approx._equal_to]3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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