| Autor: |
Tabata, Osamu, Sugiyama, Susumu, Takigawa, Mitsuharu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/2/1990, Vol. 56 Issue 14, p1314, 3p |
| Abstrakt: |
Boron and phosphorus ions are implanted in order to control the internal stress and Young’s modulus of 200-nm-thick silicon nitride and polycrystalline silicon films prepared by low-pressure chemical vapor deposition. These ions are implanted into the middle layer of the films at doses of 1×1014 and 1×1015/cm2, then the films are annealed at 900 °C. The internal stress and Young’s modulus of these films are measured by a rectangular membrane load deflection technique [Tech. Digest, IEEE Micro Electromechanical Systems Workshop, IEEE, Salt Lake City, UT, 1989, p. 152]. Both internal stress and Young’s modulus of the silicon nitride film decrease with dose, while those of the polycrystalline silicon film do not necessarily decrease. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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