| Autor: |
Favaro, M. E., Miller, L. M., Bryan, R. P., Alwan, J. J., Coleman, J. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/12/1990, Vol. 56 Issue 11, p1058, 3p |
| Abstrakt: |
We experimentally demonstrate the first p-channel negative resistance field-effect transistor. Low-temperature current-voltage characteristics exhibit negative differential resistance in the drain circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real-space transfer of holes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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