| Autor: |
Eom, J., Su, C. B., LaCourse, J., Lauer, R. B. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/5/1990, Vol. 56 Issue 6, p518, 3p |
| Abstrakt: |
An optical modulation technique is used to determine three important parameters for 1.3 μm InGaAsP diode lasers: the rate of spontaneous emission into the guided modes, the nonlinear gain coefficient, and the carrier lifetime at threshold. These results are unaffected by electrical parasitics, and are essential to understanding the noise and modulation properties of diode lasers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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