| Autor: |
Bradshaw, J. L., Devaty, R. P., Choyke, W. J., Messham, R. L. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/10/1989, Vol. 55 Issue 2, p165, 3p |
| Abstrakt: |
A long minority-carrier diffusion length and the transmission of Alx Ga1-x As luminescence through Alx Ga1-x As layers are identified as two processes causing the excitation of GaAs spectra through thick Alx Ga1-x As layers, as well as contributing to enhancements in low-temperature photoluminescence intensity observed in Alx Ga1-x As layers without GaAs substrates. A simple model for intensity enhancement due to below-band-gap photon recycling is introduced to explain the observed enhancements. Some features that uniquely distinguish below-band-gap photon recycling from the better known room-temperature process are presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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