| Autor: |
Cheng, J., Chettaoui, A., Penuelas, J., Gobaut, B., Regreny, P., Benamrouche, A., Robach, Y., Hollinger, G., Saint-Girons, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2010, Vol. 107 Issue 9, p094902-1-094902-4, 4p |
| Abstrakt: |
A study of epitaxial growth of GaAs islands on (2×1) reconstructed SrTiO3(001) surface is presented. Under low arsenic partial pressures (PAs), GaAs islands are (001)-oriented, and increasing PAs leads to the progressive formation of (111)-oriented GaAs islands. This results from the competition between the formation of Ga-O and Ga-As bonds at the early stages of the growth, as supported by the analysis of the evolution of the island density with respect to PAs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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