| Autor: |
Sahlén, Olof, Masseboeuf, Eric, Rask, Michael, Nordell, Nils, Landgren, Gunnar |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/7/1988, Vol. 53 Issue 19, p1785, 3p |
| Abstrakt: |
Optical bistability at 5 mW input power at 840 nm is reported in Al0.06Ga0.94As étalons grown by metalorganic vapor phase epitaxy, having an epitaxially grown high-reflecting back mirror. The devices have been switched from the high-reflecting to the low-reflecting state with pulses from a laser diode operating at 778 nm with 10 pJ switching energy. The devices could be thermally stable for as long as 200 μs. The experimental results are compared with a simple theoretical model. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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