| Autor: |
Higman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/24/1988, Vol. 53 Issue 17, p1623, 3p |
| Abstrakt: |
We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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