| Autor: |
Ahrenkiel, R. K., Dunlavy, D. J., Benner, J., Gale, R. P., McClelland, R. W., Gormley, J. V., King, B. D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/15/1988, Vol. 53 Issue 7, p598, 2p |
| Abstrakt: |
Double-heterostructure devices of type AlxGa1-xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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