| Autor: |
Paquin, N., Pepper, M., Gundlach, A., Ruthven, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/18/1988, Vol. 53 Issue 3, p198, 3p |
| Abstrakt: |
Measurements of the Hall (ρxy) and transverse (ρxx) resistivities in narrow polycrystalline silicon-gated Si(100) field-effect transistors have been obtained. The measurements were carried out both with and without externally applied uniaxial stress. Analysis of the results suggests the presence of large compressive intrinsic edge stresses. A model based on device fabrication is developed to explain the presence of these edge stresses. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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