| Autor: |
Shen, H., Hang, Z., Pan, S. H., Pollak, Fred H., Woodall, J. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/13/1988, Vol. 52 Issue 24, p2058, 3p |
| Abstrakt: |
The amplitude of the photoreflectance (PR) spectra of the direct gap of semi-insulating GaAs has been studied as a function of pump chopping frequency (2–4000 Hz) and temperature (25–198 °C). We have been able to deduce a temperature-dependent trap time and hence trap activation energy of 0.70±0.05 eV. Our experiment demonstrates that PR can be used as a contactless method to study deep traps in semiconductors, analogous to deep level transient spectroscopy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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