Long-wavelength photoluminescence of InAs1-xSbx (0
Autor:
Yen, M. Y., People, R., Wecht, K. W., Cho, A. Y.
Předmět:
Zdroj:
Applied Physics Letters; 2/8/1988, Vol. 52 Issue 6, p489, 3p
Abstrakt:
InAs1-xSbx films have been successfully prepared by molecular beam epitaxy on (100) InAs substrates. Long-wavelength photoluminescence has been investigated over the complete compositional range. Luminescence peak wavelengths as long as 8 μm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch. These results are indicative of high-quality material. [ABSTRACT FROM AUTHOR]
Databáze:
Complementary Index
Externí odkaz:
| Autor: | Yen, M. Y., People, R., Wecht, K. W., Cho, A. Y. |
|---|---|
| Předmět: | |
| Zdroj: | Applied Physics Letters; 2/8/1988, Vol. 52 Issue 6, p489, 3p |
| Abstrakt: | InAs1-xSbx films have been successfully prepared by molecular beam epitaxy on (100) InAs substrates. Long-wavelength photoluminescence has been investigated over the complete compositional range. Luminescence peak wavelengths as long as 8 μm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch. These results are indicative of high-quality material. [ABSTRACT FROM AUTHOR] |
| Databáze: | Complementary Index |
| Externí odkaz: |
|