| Autor: |
Peercy, P. S., Tsao, J. Y., Stiffler, S. R., Thompson, Michael O. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/18/1988, Vol. 52 Issue 3, p203, 3p |
| Abstrakt: |
Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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