| Autor: |
Mankiewich, P. M., Scofield, J. H., Skocpol, W. J., Howard, R. E., Dayem, A. H., Good, E. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 11/23/1987, Vol. 51 Issue 21, p1753, 3p |
| Abstrakt: |
We report on a new process to make films of Y1Ba2Cu3O7 using coevaporation of Y, Cu, and BaF2 on SrTiO3 substrates. The films have high transition temperatures (up to 91 K for a full resistive transition), high critical current densities (106 A/cm2 at 81 K), and a reduced sensitivity to fabrication and environmental conditions. Because of the lower reactivity of the films, we have been able to pattern them in both the pre-annealed and post-annealed states using conventional positive photoresist technology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
