Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement.

Autor:	Alpern, Y., Shappir, J.
Předmět:	METAL oxide semiconductors CAPACITORS POLYCRYSTALS SILICON
Zdroj:	Applied Physics Letters; 11/9/1987, Vol. 51 Issue 19, p1524, 3p
Abstrakt:	Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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