Properties of hydrogen induced voids in silicon.
Autor: | Weber, J., Fischer, T., Hieckmann, E., Hiller, M., Lavrov, E. V. |
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Zdroj: | Journal of Physics: Condensed Matter; 6/8/2005, Vol. 17 Issue 22, p1-1, 1p |
Databáze: | Complementary Index |
Externí odkaz: |