| Autor: |
Caneau, C., Zyskind, J. L., Sulhoff, J. W., Glover, T. E., Centanni, J., Burrus, C. A., Dentai, A. G., Pollack, M. A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/7/1987, Vol. 51 Issue 10, p764, 3p |
| Abstrakt: |
Double heterostructure 2.2 μm wavelength lasers were fabricated from Ga0.84In0.16As0.15Sb0.85/ AlxGa1-xAs0.04Sb0.96 wafers grown by liquid phase epitaxy. These structures were grown with Al-rich confinement layers (x=0.4) for optical confinement and thin intermediate cladding layers (x=0.34) to relieve the strain resulting from the lattice mismatch of the Al-rich confinement layers with respect to the substrate and the active layer. A threshold current density as low as 1.7 kA/cm2 was obtained at room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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