Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs).
| Autor: | Herbert, D. C., Uren, M. J., Hughes, B. T., Hayes, D. G., Birbeck, J. C. H., Balmer, R., Martin, T., Crow, G. C., Abram, R. A., Walmsley, M., Davies, R. A., Wallis, R. H., Phillips, W. A., Jones, S. |
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| Zdroj: | Journal of Physics: Condensed Matter; 4/8/2002, Vol. 14 Issue 13, p1-1, 1p |
| Databáze: | Complementary Index |
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