| Autor: |
Woodhouse, J. D., Gaidis, M. C., Donnelly, J. P., Armiento, C. A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/20/1987, Vol. 51 Issue 3, p186, 3p |
| Abstrakt: |
An enhanced-overpressure capless annealing technique suitable for annealing ion-implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn-coated InP wafer and is based on the same principle as the In-Sn-P liquid-solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 1014 cm-2 Si+ and annealed at 900 °C for 10 s exhibited improved electrical characteristics over samples annealed at 750 °C for 5 min using conventional encapsulation techniques. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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