| Autor: |
Ghandhi, Sorab K., Parat, Krishna K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/26/1987, Vol. 50 Issue 4, p209, 3p |
| Abstrakt: |
Very shallow n+ layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 °C in an open-tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6×1018/cc and a diffusion constant of 1.1×10-14 cm2/s at 670 °C. Diodes made on n+-p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4×10-15 A/cm2, signifying the presence of a defect-free junction. These diffusions, with junction depths in the 400–700 Å range, are ideal for solar cell applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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