| Autor: |
Judd, T., Couch, N. R., Beton, P. H., Kelly, M. J., Kerr, T. M., Pepper, M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/15/1986, Vol. 49 Issue 24, p1652, 2p |
| Abstrakt: |
We have investigated the low-temperature properties of a GaAs n-i-n diode where the intrinsic region consists of a linearly graded gap of AlGaAs, and is surrounded by lightly doped GaAs regions. The current-voltage (I-V) characteristics are strongly asymmetric and are dominated by the graded cap. Unstable I-V characteristics are obtained in forward bias. Random switching is seen between resistance levels. This is ascribed to single electron events at traps near the abrupt heterojunction of the graded gap—the first such observation in a large area device. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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