| Autor: |
Parker, D. G., Couch, N. R., Kelly, M. J., Kerr, T. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/13/1986, Vol. 49 Issue 15, p939, 3p |
| Abstrakt: |
The photoresponse to a short optical pulse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice is reported. The response to a light pulse of <400 fs duration has been measured and a rise time of 80 ps is observed. The trailing edge of the response exhibits a long time tail, which is thought to be dominated by the time taken to tunnel through the thickest barrier, being the Γ-Γ separation of the GaAs and AlAs of a 3-nm barrier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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