| Autor: |
Van Eck, T. E., Chu, P., Chang, W. S. C., Wieder, H. H. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/21/1986, Vol. 49 Issue 3, p135, 2p |
| Abstrakt: |
Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure has been observed. With only ten quantum wells, 6.4% transmission modulation was obtained at 0.950 μm with 2 V reverse bias. A single absorption peak was observed, in contrast to the double peak observed in similar GaAs/AlGaAs structures. The present structure is fabricated on a GaAs substrate which is transparent to light at the exciton absorption wavelength. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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