| Autor: |
Chen, C. K., Geis, M. W., Finn, M. C., Tsaur, B-Y. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/12/1986, Vol. 48 Issue 19, p1300, 3p |
| Abstrakt: |
A new capping technique employing high-temperature NH3 annealing has been developed to ensure uniform wetting by the molten Si zone during zone-melting recrystallization of Si-on-insulator films. By using this technique, we have reproducibly prepared 0.5-μm-thick films with <100> crystalline texture that are greatly improved in smoothness, void density, and thickness uniformity. In addition, recrystallized 1-μm-thick films have been obtained with large areas that are free of subboundaries, containing only threading dislocations at densities of less than 2×106 cm-2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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