| Autor: |
Van Eck, T. E., Walpita, L. M., Chang, W. S. C., Wieder, H. H. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 2/17/1986, Vol. 48 Issue 7, p451, 3p |
| Abstrakt: |
Franz–Keldysh electrorefraction and electroabsorption were measured for semi-insulating InP and GaAs at several electric fields and several wavelengths near the absorption edge. For InP, the experimental results are described well by an effective mass approximation theory with a correction that accounts for the exponential absorption tail. It is shown that, at least in InP, Franz–Keldysh electrorefraction is under some conditions much stronger than the Pockels effect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
