| Autor: |
Walker, A. J., Borchert, M. T., Vriezema, C. J., Zalm, P. C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/26/1990, Vol. 57 Issue 22, p2371, 3p |
| Abstrakt: |
Lithographically generated well-defined surface topography of submicron dimensions has been etched into silicon (100) previously implanted with 25 keV 11B to a fluence of 2×1014 atoms/cm2. The thus-obtained samples were depth profiled via secondary-ion mass spectrometry (SIMS). The boron concentration distributions measured were contrasted against those found on undisturbed flat parts of the target. From this intercomparison the otherwise trivial observation that surface topography causes profile distortion becomes suddenly alarming as an apparent improvement of depth resolution occurs. Scanning electron microscope images enable identification of the origin of this remarkable phenomenon. The present results imply that (i) the hitherto commonly accepted assumption in the interpretation of SIMS depth profiles that perceived gradients are never steeper than actual ones is subject to revision; (ii) it may prove very difficult, if not impossible, to construct SIMS equipment for reliable on-chip analysis of submicron details. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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