| Autor: |
Fouquet, J. E., Robbins, V. M., Rosner, S. J., Blum, O. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/8/1990, Vol. 57 Issue 15, p1566, 3p |
| Abstrakt: |
Ga0.5In0.5P grown lattice matched to GaAs by metalorganic chemical vapor deposition (MOCVD) exhibited domains of varying degrees of column III sublattice ordering. Continuous-wave photoluminescence spectra were single peaked and relatively narrow, but the peak wavelengths from samples grown at low (630–670 °C) temperatures varied strongly with excitation density at low measurement temperatures, while peak wavelength did not vary for high (775 °C) temperature growth. The half width was 6.5 meV in the latter case, the narrowest reported from MOCVD-grown Ga0.5In0.5P. Time-resolved photoluminescence of partially ordered GaInP at liquid-helium temperatures is reported for the first time. For samples grown at low temperatures, the spectral peak displayed a slow (τ>=1 μs) decay at low excitation density. The decay was more rapid (τ=1.8 ns) at higher excitations and at higher photon emission energies. Possible explanations discussed include spatial separation of carriers and trapping. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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