| Autor: |
Han, C. J., Moslehi, M. M., Helms, C. R., Saraswat, K. C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/1/1985, Vol. 46 Issue 7, p641, 3p |
| Abstrakt: |
We report on selected results of an extensive study of SiO2 nitridation in an NH3 ambient obtained primarily using Auger sputter profiling. By investigating a large matrix of samples, we have sorted out the discrepancies present in the literature concerning the kinetics of the nitridation process. Two major new results obtained are the quantitative observation of oxygen depletion in the nitroxide ‘‘bulk’’ region and, consistent with a recent report by R. Vasquez, M. Hecht, F. Grunthaner, and M. Naiman [Appl. Phys. Lett. 44, 969 (1984)], the reoxidation of the interface by oxygen presumably liberated by the bulk exchange reaction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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