High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs.

Autor: Pritchard, R., Klipstein, P. C., Couch, N. R., Kerr, T. M., Roberts, J. S., Mistry, P., Soylu, B., Stobbs, W. M.
Zdroj: Semiconductor Science & Technology; Sep1989, Vol. 4 Issue 9, p1-1, 1p
Databáze: Complementary Index